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| NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3401 Chip position 1.1 1.0 0.3 0.2 4.8 4.4 Active area 0.55 0.7 0.3 0.8 0.6 Collector 2.7 2.5 Emitter GEO06973 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 460 nm bis 1080 nm q Hohe Linearitat q SMT-Bauform mit Basisanschlu, geeignet fur Vapor Phase-Loten und IR-Reflow-Loten (JEDEC level 4) q Nur gegurtet lieferbar Anwendungen q Umgebungslicht-Detektor q Lichtschranken fur Gleich- und Wechsellichtbetrieb q Industrieelektronik q Messen/Steuern/Regeln" 2.1 1.9 0.5 0.3 1.1 0.9 0.1 0.0 Base Features q Especially suitable for applications from 460 nm to 1080 nm q High linearity q SMT package with base connection, suitable for vapor phase and IR reflow soldering (JEDEC level 4) q Available only on tape and reel Applications q Ambient light detector q Photointerrupters q Industrial electronics q For control and drive circuits Semiconductor Group 1 1998-04-27 SFH 3401 Typ Type SFH 3401 Bestellnummer Ordering Code Q62702-P5014 Gehause Package Klares Epoxy-Gieharz, Kollektorkennzeichung: breiter Anschlu Transparent epoxy resin, collector marking: broad lead Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektor-Emitterspannung, t < 120 s Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Top; Tstg VCE VCE IC ICS VEC Ptot RthJA Wert Value - 40 ... + 85 20 70 50 100 7 120 450 Einheit Unit oC V V mA mA V mW K/W Semiconductor Group 2 1998-04-27 SFH 3401 Kennwerte (TA = 25 oC, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Kapazitat, VCB = 0 V, f = 1 MHz, E = 0 Capacitance Kapazitat, VEB = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 10 V, E = 0 Fotostrom der Kollektor-Basis Fotodiode Photocurrent of collector-base photodiode Ee = 0.1 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Symbol Symbol S max Wert Value 850 Einheit Unit nm 460 ... 1080 nm A LxB LxW H CCE CCB CEB ICEO 0.55 1x1 0.2 ... 0.3 60 15 45 19 10 ( 200) mm2 mm x mm mm Grad deg. pF pF pF nA IPCB IPCB 0.28 4.8 A A Semiconductor Group 3 1998-04-27 SFH 3401 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.1 mW/cm2 Stromverstarkung Current gain Ee = 0.1 mW/cm2, VCE = 5 V 1) 1) Symbol Symbol Wert Value -1 -2 -3 Einheit Unit IPCE IPCE tr, tf 63 ... 125 1.65 16 100 ... 200 160 ... 320 2.6 24 4.2 34 A mA s VCEsat 170 170 170 mV I PCE ---------I PCB 340 530 860 IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1998-04-27 SFH 3401 TA = 25 oC, = 950 nm Rel.spectral sensitivity Srel = f () 100 OHF02332 Photocurrent IPCE = f (Ee), VCE = 5 V 10 1 mA 1 2 3 OHF00326 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 50 OHF02344 S rel % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 pce C CE pF 40 10 0 10 -1 30 10 -2 20 10 -3 10 10 -4 -3 10 10 -2 mW/cm 2 Ee 10 0 0 -2 10 10 -1 10 0 10 1 V 10 2 VCE Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 C PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Dark current ICEO = f (TA), VCE = 10 V, E = 0 OHF01524 Collector-base capacitance CCB= f (VCB), f = 1 MHz, E = 0 C CB 50 pF 45 40 OHF00332 PCE 1.6 CEO 10 2 nA OHF02342 10 1 35 30 10 0 25 20 10 -1 15 10 5 10 -2 0 25 50 75 C 100 TA 0 20 40 60 80 C 100 TA 0 -2 10 10 -1 10 0 10 1 V 10 2 V CB Photocurrent IPCE = f (VCE) SFH 3401-3 pce 3.0 mA 2.5 1.0 mW/cm 2 OHF00327 Dark current ICEO = f (VCE), E = 0 CEO 10 2 nA OHF02341 Emitter-base capacitance CEB = f (VEB), f = 1 MHz, E = 0 C EB 20 pF 18 16 14 12 OHF00333 10 1 2.0 1.5 0.5 mW/cm 2 1.0 0.25 mW/cm 2 0.5 0.1 mW/cm 2 0 10 0 10 8 10 -1 6 4 2 10 -2 0 10 20 30 40 50 60 V 70 Vce 0 10 20 30 40 50 V 70 V CE 0 -2 10 10 -1 10 0 10 1 V 10 2 V EB Semiconductor Group 5 1998-04-27 SFH 3401 Total power dissipation Ptot = f (TA) 140 Ptot mW 120 100 80 60 40 20 0 OHF00309 0 20 40 60 80 C 100 TA Photocurrent IPCE = f (VCE), IB = Parameter 6 mA 5 6 A 5 A 4 4 A 3 3 A 2 A 1 A OHF00334 PCE 2 1 0 0 2 4 6 8 10 12 14 16 V 20 V CE Semiconductor Group 6 1998-04-27 |
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